2014-04-04 1 BFR93AW 1 2 3 low noise silicon bipolar rf transistor ? for low distortion amplifiers and oscillators up to 2 ghz at collector currents from 5 ma to 30 ma ? pb-free (rohs compliant) and halogen-free package with visible leads ? qualification report according to aec-q101 available esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFR93AW r2s 1=b 2=e 3=c sot323 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 90 ma base current i b 9 total power dissipation 1) t s 108 c p tot 300 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 140 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thjs please refer to application note an077 (thermal resistance calculation)
2014-04-04 2 BFR93AW electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 2 v, i c = 0 i ebo - - 10 a dc current gain i c = 30 ma, v ce = 8 v, pulse measured h fe 70 100 140 -
2014-04-04 3 BFR93AW electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 8 v, f = 500 mhz f t 4.5 6 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.58 0.8 pf collector emitter capacitance v ce = 10 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.3 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 1.9 - minimum noise figure i c = 5 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz nf min - - 1.5 2.6 - - db power gain, maximum available 1) i c = 30 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz g ma - - 15.5 10.5 - - transducer gain i c = 30 ma, v ce = 8 v, z s = z l = 50 ? , f = 900 mhz f = 1.8 mhz | s 21e | 2 - - 13 7.5 - - db third order intercept point at output 2) i c = 30 ma, v ce = 8 v, z s = z l = 50 ? , f = 0.9 ghz ip 3 - 15 - dbm 1db compression point i c = 30 ma, v ce = 8 v, z s = z l = 50 ? , f = 0.9 ghz p -1db - 6 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ) 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz
2014-04-04 4 BFR93AW total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 mw 350 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2014-04-04 5 BFR93AW package sot323
2014-04-04 6 BFR93AW edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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